Multi-Layer Deposition SYstem for Manufacture


Solid-source ECR plasma deposition system that makes it possible to form multi-layer films from a large number of materials

  • Low temperature process
  • High refractive index control
  • High-speed reactive film formation
  • Condensation / flat film

More than 100 Solid Source ECR Plasma Deposition Systems has been introduced into production lines since they can form high-quality nano-thick thin films at low temperature and with low damage. Equipments of AFTEX-9000 family for max. 200mmφsamples can be equipped with up to three ECR plasma sources allowing simultaneous film deposition using all of them, which realize extremely high throughput.

  • Deposition Characteristics
  • Product Features
  • Standard Specification
  • Principles and Features of ECR Plasma Deposition
Deposition Characteristics

Large variation of materials and layers

Various oxides and nitrides can be deposited by using various target materials and the safety gases, such as argon, oxygen, and nitrogen.

Controllability of refractive index

The solid source (target) and the dry gases, such as oxygen and nitrogen provide a high controllability for refractive index of the films.

Deposition chemistry

The ECR plasma stream promotes a high reactivity between the materials from the target and the safety gases, providing high-speed reactive sputtering deposition.

Low temperature, less damage, surface treatment

The ion energies (10-30 eV) in the ECR plasma stream present a high-quality and less-damage deposition. Cleaning or ultra-thin oxide/nitride film deposition is available by using ECR-plasma-stream irradiation on the sample surface.

Product Features
  • Automatic carrier system with 200 mmφ samples, 3 ECR plasma deposition room (max.)
  • High throughput by simultaneous deposition with the 3 ECR sources
  • By setting recipes, desired multilayer is automatically produced.
  • Sample rotation and inclined ECR-source installation provide excellent uniformity and coverage.
  • Option:Spectrometer to measure film thickness and refractive index (NEW)
  • Need no waste gas processing system by using the solid source (target) and safety gases, such as argon, oxygen, and nitrogen.
Standard Specification
Items Specification
Residual gas pressure Process room: <3E-5 Pa,
Transfer room: <9E-5 Pa
Load-lock room: <3E-4 Pa
Evacuation system Process room
Turbo-molecular pump: 1300 l/s
Rotary pump: 500 l/min
Transfer room
Turbo-molecular pump: 450 l/s
Rotary pump: 250 l/min
Load-lock room
Turbo-molecular pump: 450 l/s
Rotary pump: 250 l/min
Load-lock room Automatic open/close door
Casette: 12 samples
Sample detection system
Transfer room Robot arm system
Sample detection system
Face-down carrier
Additional small room (option): max. 2 units
Deposition room
Available room number Max. 3 units
Substrate size Max. 200mmφ
Substrate holder Rotation and up/down mechanism
Temporary cradle mechanism
Deposition Upward
Substrate heating Max.300℃
ECR source
Quantity 1 unit for each deposition room
Type Microwave introduction method coupled with divided microwaves
Plasma chamber Inclined installation
Target Cylindrical target
Inner diameter: 125mm
Gas system 3 lines, controlled by mass-flow controllers for each deposition room
Gaseous species: Ar, O2, N2
Operation Automatic evacuation, carrying, and deposition by recipes
Controller Microwave source:2.45GHz, 1kW, 1unit
Microwave auto-tuner
Magnet coil power supply:DC 1.5kW, 2units
Sputtering power source:13.56MHz, 1kW, 1unit
RF auto-matching controller
Computer and sequencer
Install. requirements
Foot print 7x6m (including working space)
Electric power 3φ200V, 75A, max.4 lines
Cooling water flow 20 l/min (room temp.),
0.3-0.4 MPa (inlet), max. 3 lines
Weight About 7000kg
Principles and Features of ECR Plasma Deposition

ALD Principle

Electrons rotating within the confines of lines of magnetic force of a field strength of 87.5 mT (Tesla) are excited by an alternating electric field at 2.45 GHz (electronic cyclotron resonance), and absorb energy to rotate at high speed. This ensures that gas molecules collide, even at low pressures where discharge is difficult, to generate a plasma efficiently.

High refractive index control

  • No electrical power, low gas pressure (0.01-0.2 Pa), large-current ion bombardment effect at low energies (10-30 eV) to a high-density (5-10 mA/cm²) substrate surface
  • Formation of precise, smooth, high-quality thin films, with low heating and low damage

Physical properties of ECR thin films

Tiny irregularities at the single-atom level (Rmax of I2O2 film = 0.48 nm at a film thickness of 100 nm)
SiN films and carbon films have hardnesses similar to those of diamond
Waterproofing characteristics of SiN film (reliable blocking with SiN film coating)
Hydrogen barrier characteristics of AI2O2 film (barrier ability similar to bulk)
Superior optical characteristics
Highly precise refractive index control, high optical permeability (SiO2, SiN, AI2O2, AIN, Ta2O2, ZrO2, etc.) (Fig. 5) C-V characteristics of MOS capacitor using ECR-SiO2 film (implementation of superior boundary characteristics by unheated ECR oxide)
High-purity target and gas used as ingredients to achieve high levels of purity with no reaction products (H, F, CI, etc.)
High compoundability
Orientation of AIN films, MgO films, etc. Low-resistivity TiN films and α-Ta films.
Coatability of bumps is much higher than with general sputtering, by formation of inclined rotation film at low gas pressure and high ionization rate.
High voltages
High-voltage insulation film similar to bulk. 10 MV/cm for SiO₂ and Al₂O₃ films (similar to 1000°C thermal oxidation film).
Low damage
Low boundary levels and boundary charges of MOS capacitor
High permittivity
Formation of boundary oxide films inhibited by metal-mode deposition

Drawing & Diagram

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