Multi-layer deposition system for manufacture


Solid-source ECR plasma deposition system that makes it possible to form multi-layer films from a large number of materials.

  • Low temperature process
  • High refractive index control
  • High-speed reactive film formation
  • Multilayer film

A solid-source electron cyclotron resonance (ECR) plasma deposition system forms high-quality thin films by directly reacting a low-pressure, high-density ECR plasma flow with particles sputtered from a solid source (target) placed at the outlet of the plasma flow. AFTEX-6200 is equipped with two ECR plasma sources and enables automatic transfer and deposition, which is optimal for multilayer film deposition.

  • Deposition Characteristics
  • Product Features
  • Standard Specification
  • Principles and Features of ECR Plasma Deposition
Deposition Characteristics

Membranes and multi-layer films of wide range of materials

Any solid material that can be fabricated into a sputtering target can be used as the raw material, so films of various oxides and nitrides can be formed, as well as multi-layer films, by combining them with introduced gases such as oxygen or nitrogen. For example, if Si is used as the solid source, it is possible to form single-layer and multi-layer films of SiO2, Si3N4, and Si.

High refractive index control

Since there are direct reactions between a solid source and an oxygen or nitrogen ECR plasma flow, high-refractive index control is possible, with no generation of intermediate products as happens with CVD. In addition, films having any desired refractive index can be created simply by making oxygen and nitrogen flow simultaneously.

High-reactivity deposition

Rapid deposition is enabled by reactions between a solid source and a large-current ECR plasma of a gas such as oxygen or nitrogen.

Low-temperature, low-damage, surface cleaning effect

Deposition is by the ion-assist effect at a low energy but high current, making it possible to form high-quality, highly crystalline thin films at low temperatures and with low levels of damage, in comparison with conventional deposition methods. Cleaning of the substrate and grown surfaces can also be expected.

Product Features
  • 3″ tray automatic conveyor. Five trays can be set.
  • High-throughput processing of deposition on five trays in sequence, with no fall in the plasma
  • High-vacuum support by three-chamber system
  • Two branch-coupler-type ECR plasma sources, suitable for mass-production
  • Fully automatic conveying and multi-layer deposition, up to maximum of 22 layers
  • New electrical system
    Detailed display of error information
    Larger operations screen
    Recipe back-up function, etc
  • optional data logging system
    Vdc plotter
    New spectral system that enables measurement of film thickness and refractive index variance within the deposition chamber
    Additional magnetron sputtering sources (maximum 2)
    Additional gas lines (maximum 2)
Standard Specification
Item Specifications
Achieved pressure Processing chamber: Max. 3 x 10-5 Pa
Load lock chamber: Max. 3 x 10-4 Pa
Vacuum exhaust system Deposition chamber: turbo molecular pump, 1000 l/sec
Load lock chamber: turbo molecular pump
Deposition chamber
Deposition chamber Microwave branch-coupler-type ECR ion sources: 2
Substrate holder Flat step rotation
Substrate size: Max. 3”
Substrate heating Maximum 400℃
Substrate position Distance from target to substrate: 170 mm
Load lock chamber
Conveyor method Automatic tray conveying, 5 trays processed together
Number of samples Load lock chamber: 5 trays can be set
ECR sputtering source
Quantity 2
Plasma source Microwave branch-coupler-type ECR plasma source
Plasma chamber Internal diameter 150 mm, water-cooled jacket structure
Cylindrical target Cylindrical, internal diameter 100 mm x width 40 mm,
backing tube, direct cooling system
Gas introduction lines Mass-flow controller: 3 lines
Gases: argon, oxygen, nitrogen
Exhaust Automatic
Substrate conveying Automatic
Deposition Automatic/manual (switchable)
Deposition control power sources
For ECR ion source Microwave power sources (2): 2.45 GHz, 1kW
Coil power sources (2): DC 1.5 kW (2)
For ECR sputtering Target power sources (2): RF 13.56 MHz, 1 kW
Installation conditions
Space 3.5 x 3 m (including work space)
Electrical power Three-phase, 200 V, 75 A, 30 A, one system for each
Coolant water Flow rate: 20 V/min
Water pressure: 3 to 4 kg/cm2 G
Weight 2000kg
Principles and Features of ECR Plasma Deposition

ALD Principle

Electrons rotating within the confines of lines of magnetic force of a field strength of 87.5 mT (Tesla) are excited by an alternating electric field at 2.45 GHz (electronic cyclotron resonance), and absorb energy to rotate at high speed. This ensures that gas molecules collide, even at low pressures where discharge is difficult, to generate a plasma efficiently.

High refractive index control

  • No electrical power, low gas pressure (0.01-0.2 Pa), large-current ion bombardment effect at low energies (10-30 eV) to a high-density (5-10 mA/cm²) substrate surface
  • Formation of precise, smooth, high-quality thin films, with low heating and low damage

Physical properties of ECR thin films

Tiny irregularities at the single-atom level (Rmax of I2O2 film = 0.48 nm at a film thickness of 100 nm)
SiN films and carbon films have hardnesses similar to those of diamond
Waterproofing characteristics of SiN film (reliable blocking with SiN film coating)
Hydrogen barrier characteristics of AI2O2 film (barrier ability similar to bulk)
Superior optical characteristics
Highly precise refractive index control, high optical permeability (SiO2, SiN, AI2O2, AIN, Ta2O2, ZrO2, etc.) (Fig. 5) C-V characteristics of MOS capacitor using ECR-SiO2 film (implementation of superior boundary characteristics by unheated ECR oxide)
High-purity target and gas used as ingredients to achieve high levels of purity with no reaction products (H, F, CI, etc.)
High compoundability
Orientation of AIN films, MgO films, etc. Low-resistivity TiN films and α-Ta films.
Coatability of bumps is much higher than with general sputtering, by formation of inclined rotation film at low gas pressure and high ionization rate.
High voltages
High-voltage insulation film similar to bulk. 10 MV/cm for SiO₂ and Al₂O₃ films (similar to 1000°C thermal oxidation film).
Low damage
Low boundary levels and boundary charges of MOS capacitor
High permittivity
Formation of boundary oxide films inhibited by metal-mode deposition

Drawing & Diagram

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