Products

Multi-layer deposition system for manufacture

AFTEX-8000Series

Solid-source ECR plasma deposition system that makes it possible to form multi-layer films from a large number of materials.

  • Low temperature process
  • High refractive index control
  • High-speed reactive film formation
  • Condensation / flat film

AFTEX-8000 series consists of two (2) ECR plasma sources in a process chamber and C to C automation system which forms very uniform multi-layer films onto 8 inch substrate with high quality for optical films and so on. Solid source ECR plasma deposition is achieved by high

  • Deposition Characteristics
  • Product Features
  • Standard Specification
  • Principles and Features of ECR Plasma Deposition
Deposition Characteristics

High quality film formation

Due to film growth under high density plasma irradiation controlled low energy of 10 – 30 eV, dense and high quality thin films having smooth at an atomic level are formed.

Multi-layer films with wide range of materials

Any solid material that can be fabricated into a sputtering target can be used as the raw material, so films of various oxides and nitrides can be formed, as well as multi-layer films, by combining them with introduced gases such as oxygen or nitrogen. For example, if Si is used as the solid source, it is possible to form SiO2, Si3N4, and Si, if Al is used as the solid source, it is possible to form Al2O3 or AlN, Besides, Ta2O5, HfO2, ZrO2, ITO, STO and so on can be formed.

Low-temperature, low-damage

Compound films such as oxide films or nitride films can be formed effect without heating by the ion-assist, high crystallinity films can be formed at low temperatures. Cleaning of the substrate with low damage can also be expected because of low ion energy.

Product Features
  • Two (2) ECR plasma sources in a process chamber
  • Automatic Cassette to Cassette transfer system
  • (up to 200 mm dia. 3 % uniformity)
  • Up deposition, Facedown transfer
  • Easy operation by PC, rich log functions and config tools
  • SECS/GEM, CE mark, UL compliant (optional)
Standard Specification
Items Specification
Ultimate pressure Process chamber: < 3×10-5Pa
Transfer chamber: < 3×10-4Pa
Load-lock chamber: < 3×10-4Pa
Vacuum system Process chamber: TMP 1300L/sec
Dry pump: 600L/min
Transfer chamber: TMP 820L/sec
Dry pump: 500L/min
Load-lock chamber: TMP 350L/sec
Dry pump: 250L/min
Load-lock chamber Manual front-door: 1 set
Cassette elevator mechanism: 1 set
Sample sensing mechanism: 1 set
Transfer chamber Vacuum transfer robot: 1 set
Sample sensing mechanism: 1 set
Face-down transfer type
Process chamber
Substrate size Max. 8inch
Substrate holder Sample stage rotation and lifting mechanism: 1 set
Temporary sample receiving stage: 1 set
Deposition direction Up-deposition
Substrate heating Max. 300℃
ECR sputtering source
Quantity 2 set
Plasma chamber Microwave branching/coupling type ECR plasma source
Tilted against substrate holder
Magnet coil 2 split type
Target Cylindrical type (with water cooling)
Auxiliary mechanism Coil tilting mechanism
Gas feed system Mass flow controller: 3 set
Gas: Ar, O2, N2
Operations C to C full automatic processing by recipe setting (Vacuum, Transfer, Deposition)
Control system Microwave power supply 2.45GHz, 1kW: 1 sets
Microwave auto tuner: 2 sets
Coil power supply DC1.5kW: 2 sets
Sputtering power supply: 13.56MHz, 1kW: 1 set
Automated RF matching unit and controller: 1 set
PLC and computer: 1 set
Utilities
Foot print Approx. 5.7×4.3m (including maintenance area)
Electrical supply 3-phase, 200VAC, 35KVA
Cooling water 0.3~0.4MPa, 30L/min, 4 lines
System weight Approx. 2600kg
Principles and Features of ECR Plasma Deposition

ALD Principle

Electrons rotating within the confines of lines of magnetic force of a field strength of 87.5 mT (Tesla) are excited by an alternating electric field at 2.45 GHz (electronic cyclotron resonance), and absorb energy to rotate at high speed. This ensures that gas molecules collide, even at low pressures where discharge is difficult, to generate a plasma efficiently.

High refractive index control

  • No electrical power, low gas pressure (0.01-0.2 Pa), large-current ion bombardment effect at low energies (10-30 eV) to a high-density (5-10 mA/cm²) substrate surface
  • Formation of precise, smooth, high-quality thin films, with low heating and low damage

Physical properties of ECR thin films

Flatness
平滑性
Tiny irregularities at the single-atom level (Rmax of I2O2 film = 0.48 nm at a film thickness of 100 nm)
Hardness
SiN films and carbon films have hardnesses similar to those of diamond
Strictness
図
Waterproofing characteristics of SiN film (reliable blocking with SiN film coating)
図
Hydrogen barrier characteristics of AI2O2 film (barrier ability similar to bulk)
Superior optical characteristics
光学特性
Highly precise refractive index control, high optical permeability (SiO2, SiN, AI2O2, AIN, Ta2O2, ZrO2, etc.) (Fig. 5) C-V characteristics of MOS capacitor using ECR-SiO2 film (implementation of superior boundary characteristics by unheated ECR oxide)
Impurity-free
High-purity target and gas used as ingredients to achieve high levels of purity with no reaction products (H, F, CI, etc.)
High compoundability
Orientation of AIN films, MgO films, etc. Low-resistivity TiN films and α-Ta films.
Coatability
Coatability of bumps is much higher than with general sputtering, by formation of inclined rotation film at low gas pressure and high ionization rate.
High voltages
High-voltage insulation film similar to bulk. 10 MV/cm for SiO₂ and Al₂O₃ films (similar to 1000°C thermal oxidation film).
Low damage
図
Low boundary levels and boundary charges of MOS capacitor
High permittivity
Formation of boundary oxide films inhibited by metal-mode deposition

Drawing & Diagram



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