High quality film formation

Due to film growth under high density plasma irradiation controlled low energy of 10 – 30 eV, dense and high quality thin films having smooth at an atomic level are formed.

Multi-layer films with wide range of materials

Any solid material that can be fabricated into a sputtering target can be used as the raw material, so films of various oxides and nitrides can be formed, as well as multi-layer films, by combining them with introduced gases such as oxygen or nitrogen. For example, if Si is used as the solid source, it is possible to form SiO2, Si3N4, and Si, if Al is used as the solid source, it is possible to form Al2O3 or AlN, Besides, Ta2O5, HfO2, ZrO2, ITO, STO and so on can be formed.

Low-temperature, low-damage

Compound films such as oxide films or nitride films can be formed effect without heating by the ion-assist, high crystallinity films can be formed at low temperatures. Cleaning of the substrate with low damage can also be expected because of low ion energy.

• Two (2) ECR plasma sources in a process chamber
• Automatic Cassette to Cassette transfer system
• (up to 200 mm dia. 3 % uniformity)
• Up deposition, Facedown transfer
• Easy operation by PC, rich log functions and config tools
• SECS/GEM, CE mark, UL compliant (optional)

ECR Principle

Electrons rotating within the confines of lines of magnetic force of a field strength of 87.5 mT (Tesla) are excited by an alternating electric field at 2.45 GHz (electronic cyclotron resonance), and absorb energy to rotate at high speed. This ensures that gas molecules collide, even at low pressures where discharge is difficult, to generate a plasma efficiently.

High refractive index control

• No electrical power, low gas pressure (0.01-0.2 Pa), large-current ion bombardment effect at low energies (10-30 eV) to a high-density (5-10 mA/cm²) substrate surface
• Formation of precise, smooth, high-quality thin films, with low heating and low damage

Physical properties of ECR thin films

Flatness

Tiny irregularities at the single-atom level (Rmax of Al2O3 film = 0.48 nm at a film thickness of 100 nm)

Hardness

SiN films and carbon films have hardnesses similar to those of diamond

Strictness

Waterproofing characteristics of SiN film (reliable blocking with SiN film coating)

Hydrogen barrier characteristics of AI2O3 film (barrier ability similar to bulk)

Superior optical characteristics

Highly precise refractive index control, high optical permeability (SiO2, SiN, AI2O3, AIN, Ta2O5, ZrO2, etc.)

Impurity-free

High-purity target and gas used as ingredients to achieve high levels of purity with no reaction products (H, F, CI, etc.)

High compoundability

Orientation of AIN films, MgO films, etc. Low-resistivity TiN films and α-Ta films.

Coatability

Coatability of bumps is much higher than with general sputtering, by formation of inclined rotation film at low gas pressure and high ionization rate.

High voltages

High-voltage insulation film similar to bulk. 10 MV/cm for SiO2 and Al2O3 films (similar to 1000°C thermal oxidation film).

Low damage

C-V characteristics of MOS capacitor using ECR-SiO2 film (implementation of superior boundary characteristics by unheated ECR oxide) Low boundary levels and boundary charges of MOS capacitor

High permittivity

Formation of boundary oxide films inhibited by metal-mode deposition