Product Information

ECR Pasma Deposition Systems

The ECR plasma deposition method enables the formation of precise, smooth, high-quality thin films, at low temperatures and with low damage. This is leading-edge technology that is essential in the manufacturing processes of today’s electronic components. The ECR plasma deposition systems that use this ECR plasma deposition method are the optimal systems in the wide range of fields necessary for low-temperature, low-damage deposition. These systems are particularly essential in the manufacturing process (edge surface coating) of various types of high-power semiconductor laser, such as ultraviolet, red, and infrared lasers. We are also active in processes for manufacturing GMR heads for hard disks and SAW devices. In addition to the systems described below, we have a large lineup of other equipment, such as small-scale ion sources and equipment capable of handling large-scale substrates. For details, please contact us.

AFTEX-6000 series

AFTEX-6000 series

Solid-source ECR plasma deposition system that makes it possible to form multi-layer films from a large number of materials.

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AFTEX-8000 series

Solid-source ECR plasma deposition system that makes it possible to form multi-layer films from a large number of materials.

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AFTEX-9000 series

AFTEX-9000 series

Solid-source ECR plasma deposition system that makes it possible to form multi-layer films from a large number of materials

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AFTEX-2300

Since this system is provided with just the basic functions of a solid source ECR plasma deposition system, it is more economical that an automatic deposition system.

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Atomic Layer Deposition Systems

ALD method is a thin film deposition method realizing superior step coverage and film-thickness controllability. Even in the structure having high aspect ratio or complex 3D configuration, it is possible to form thin films controlled at the atomic level. In addition to the conventional benefit of ALD, AFALD ensures the deposition of high-density and high-quality films by enhancing the reactivity using a plasma precisely controlled in milliseconds order. This system can accommodate max. four metal precursors and max. three reactive gases, and by combining it with a proper transfer module, all your needs from R&D to massproduction can be met.

AFALD-8

AFALD-8

A capacitive-coupling-type plasma source is installed, enabling the deposition of high-quality thin films at low temperatures. A wide range of materials can be deposited by using gases of various materials for ALD.

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