Membranes and multi-layer films of wide range of materials

Any solid material that can be fabricated into a sputtering target can be used as the raw material, so films of various oxides and nitrides can be formed, as well as multi-layer films, by combining them with introduced gases such as oxygen or nitrogen. For example, if Si is used as the solid source, it is possible to form single-layer and multi-layer films of SiO2, Si3N4, and Si.

High refractive index control

Since there are direct reactions between a solid source and an oxygen or nitrogen ECR plasma flow, high-refractive index control is possible, with no generation of intermediate products as happens with CVD. In addition, films having any desired refractive index can be created simply by making oxygen and nitrogen flow simultaneously.

High-reactivity deposition

Rapid deposition is enabled by reactions between a solid source and a large-current ECR plasma of a gas such as oxygen or nitrogen.

Low-temperature, low-damage, surface cleaning effect

Deposition is by the ion-assist effect at a low energy but high current, making it possible to form high-quality, highly crystalline thin films at low temperatures and with low levels of damage, in comparison with conventional deposition methods. Cleaning of the substrate and grown surfaces can also be expected.

• 3″ tray automatic conveyor. Five trays can be set.
• High-throughput processing of deposition on five trays in sequence, with no fall in the plasma
• High-vacuum support by three-chamber system
• Two branch-coupler-type ECR plasma sources, suitable for mass-production
• Fully automatic conveying and multi-layer deposition, up to maximum of 22 layers
• New electrical system
  Detailed display of error information
  Larger operations screen
  Recipe back-up function, etc
• optional data logging system
  Vdc plotter
  New spectral system that enables measurement of film thickness and refractive index variance within the deposition chamber
  Additional magnetron sputtering sources (maximum 2)
  Additional gas lines (maximum 2)

ECR Principle

Electrons rotating within the confines of lines of magnetic force of a field strength of 87.5 mT (Tesla) are excited by an alternating electric field at 2.45 GHz (electronic cyclotron resonance), and absorb energy to rotate at high speed. This ensures that gas molecules collide, even at low pressures where discharge is difficult, to generate a plasma efficiently.

High refractive index control

• No electrical power, low gas pressure (0.01-0.2 Pa), large-current ion bombardment effect at low energies (10-30 eV) to a high-density (5-10 mA/cm²) substrate surface
• Formation of precise, smooth, high-quality thin films, with low heating and low damage

Physical properties of ECR thin films

Flatness

Tiny irregularities at the single-atom level (Rmax of Al2O3 film = 0.48 nm at a film thickness of 100 nm)

Hardness

SiN films and carbon films have hardnesses similar to those of diamond

Strictness

Waterproofing characteristics of SiN film (reliable blocking with SiN film coating)

Hydrogen barrier characteristics of AI2O3 film (barrier ability similar to bulk)

Superior optical characteristics

Highly precise refractive index control, high optical permeability (SiO2, SiN, AI2O3, AIN, Ta2O5, ZrO2, etc.)

Impurity-free

High-purity target and gas used as ingredients to achieve high levels of purity with no reaction products (H, F, CI, etc.)

High compoundability

Orientation of AIN films, MgO films, etc. Low-resistivity TiN films and α-Ta films.

Coatability

Coatability of bumps is much higher than with general sputtering, by formation of inclined rotation film at low gas pressure and high ionization rate.

High voltages

High-voltage insulation film similar to bulk. 10 MV/cm for SiO2 and Al2O3 films (similar to 1000°C thermal oxidation film).

Low damage

C-V characteristics of MOS capacitor using ECR-SiO2 film (implementation of superior boundary characteristics by unheated ECR oxide) Low boundary levels and boundary charges of MOS capacitor

High permittivity

Formation of boundary oxide films inhibited by metal-mode deposition