Atomic layer deposition system
A capacitive-coupling-type plasma source is installed, enabling the deposition of high-quality thin films at low temperatures. A wide range of materials can be deposited by using gases of various materials for ALD.
ALD method is a thin film deposition method realizing superior step coverage and film-thickness controllability. Even in the structure having high aspect ratio or complex 3D configuration, it is possible to form thin films controlled at the atomic level. In addition to the conventional benefit of ALD, AFALD ensures the deposition of high-density and high-quality films by enhancing the reactivity using a plasma precisely controlled in milliseconds order. This system can accommodate max. four metal precursors and max. three reactive gases, and by combining it with a proper transfer module, all your needs from R&D to massproduction can be met.
Item | Full Cluster Type | Compact Cluster Type | Load-lock Type |
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Configuration | ![]() |
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Process Modules | Max. 3 | 1 | 1 |
Transfer Robot | W Arm | Single Arm | Linear Actuator (Auto/Manual) |
Load-Locks | Max. 2 | 1 | 1 |
Sub Chambers | Max. 2 | Max. 2 | None |
Easy maintenance by well-designed Inner-Chamber.
A unique patented vaporizer having excellent material consumption efficiency by controlling the feeding pressure is adopted.
TEL 045-787-7203 / FAX 045-787-8472
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